辐照加固SRAM型FPGA总剂量辐射效应研究

摘要

在航天辐射环境中,电离辐射产生的辐射效应会对电子元器件性能产生影响。文章对自主研发的SRAM型FPGA芯片在60Co-γ源辐照下的总剂量辐射效应进行了研究。实验表明：（1）总剂量累积到一定程度后功耗电流线性增大,但只要功耗电流在极限范围内,FPGA仍能正常工作;（2）SRAM型FPGA在配置过程中需要瞬间大电流,故辐照后不能立即配置;（3）总剂量辐照实验时,功耗电流能直观反映器件随总剂量的变化关系,可作为判断器件失效的一个敏感参数。该研究为FPGA的设计提供了基础。%In space environment, electronic devices are affected by total ionizing dose radiation. This paper investigates the total ionizing dose radiation effects of SRAM based field prograrmnable gate array （FPGA） , which is invented by us. The results show that： （1） The consumption current augments linearly with total does, but the FPGA can still run normally when the radiation effect can be endured. （2） The SRAM based FPGA can＇t be configured immediately after radiation experiment, since the configuration needs a large transient current. （3） The power current can be regarded as a sensitive parameter to judge the invalidation of the device in the total dose radiation experiment. This work supplies a good technologic base for designing FPGA in the future