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Specific features of 325 nm Raman excitation of heavily boron doped polycrystalline diamond films

机译:大硼掺杂多晶金刚石薄膜325nm拉曼激发的具体特点

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摘要

A set of MPCVD films was prepared from 0.5 percent CH_4/H_2 and B_2H_6 with B/C in the gas phase from 0 to 8000 ppm. When the excitation wavelength of their Raman spectra is switched from 632.8 to 325 nm: The Fano induced dip switches from high to low wave number side of the "1332 cm~(-1)" signal. The deformation and the downward shift of this signal decrease. The G band, diamond second order, CH_X bands appear. The evolution of these bands with increasing B/C is reported and discussed.
机译:将一组MPCVD薄膜从0.5%CH_4 / h_2和B_2H_6制备,其中B / C在气相中的0至8000ppm。 当其拉曼光谱的激发波长从632.8转换为325nm时:Fano诱导的DIP开关从高到“1332cm〜(-1)”信号的低波数侧。 该信号的变形和向下移位减少。 G频带,钻石二阶,CH_X频段出现。 报告并讨论了随着B / C增加的这些带的演变。

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