Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

摘要

The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film's conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters - the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds - close or above the metal-insulator transition - on the complex material charge transport mechanisms.