Simulation of microwave plasmas concentrated on the top surface of a diamond substrate with finite thickness

摘要

Steady states of microwave plasma discharges have been numerically studied for chemical vapor depositions of diamonds. In the present simulations, a diamond substrate with 1 mm thick and 5 X 5 mm~2 areas is taken into account. It is found that distributions of plasma close to the substrate are modified by the presence of the substrate. By changing a depth of the substrate and a distance between edges of the substrate and the holder, profiles of the power density above the substrate can be varied into concave/convex distributions similar to experimentally observed surface morphologies. Clear correspondence between tendencies of these density distributions and experimentally observed surface morphologies is found.