Enhanced Diamond Nucleation by Surface Texturing of Si Substrate in SF_6/O_2 Plasmas

摘要

SF_6/O_2 plasma surface texturing was employed to pretreat Si substrate for achieving enhanced diamond nucleation density. Surface roughness of the textured Si was found to be strongly dependent on the process pressure and normalized roughness values in the range of 2-16 were obtained. Remarkably enhanced nucleation densities of ～10~(10) cm~(-2) compared to conventional mechanical abrasion were obtained after seeding for the surface textured Si substrates. Raman spectroscopy revealed that ultrananocrystalline diamond films with grain size below 10 nm were grown on the surface textured Si.