首页> 外国专利> Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly

Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly

机译:将基板暴露于表面微波等离子体的方法,蚀刻方法,沉积方法,表面微波等离子体产生装置,半导体基板蚀刻装置,半导体基板沉积装置和微波等离子体产生天线组件

摘要

In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least some of the openings of the respective antennas overlap with at least some of the openings of another antenna, and form an effective plurality of microwave transmissive openings through the antenna assembly. Microwave energy is passed through the effective plurality of openings of the antenna assembly and to a flowing gas effective to form a surface microwave plasma onto a substrate received within the processing chamber. At least one of the antennas is moved relative to another of the antennas to change at least one of size and shape of the effective plurality of openings through the antenna assembly effective to modify microwave energy passed through the antenna assembly to the substrate.
机译:在某些实施方式中,方法和设备包括具有至少两个重叠且可移动的表面微波等离子体天线的天线组件。天线具有穿过其形成的相应的多个微波透射开口。各个天线的至少一些开口与另一天线的至少一些开口重叠,并形成穿过天线组件的有效的多个微波透射开口。微波能量穿过天线组件的有效多个开口,并流到有效地将表面微波等离子体形成在处理室内的基板上的流动气体。天线中的至少一个相对于天线中的另一个移动,以改变穿过天线组件的有效多个开口的尺寸和形状中的至少一个,从而有效地改变通过天线组件到达基板的微波能量。

著录项

  • 公开/公告号US7097782B2

    专利类型

  • 公开/公告日2006-08-29

    原文格式PDF

  • 申请/专利权人 GUY T. BLALOCK;TRUNG TRI DOAN;

    申请/专利号US20020293025

  • 发明设计人 GUY T. BLALOCK;TRUNG TRI DOAN;

    申请日2002-11-12

  • 分类号H01L21;

  • 国家 US

  • 入库时间 2022-08-21 21:42:31

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号