PLASMA PROCESSING APPARATUS FOR PERFORMING PLASMA PROCESSES SUCH AS FILM DEPOSITION PROCESS, SURFACE MODIFICATION PROCESS, AND ETCHING PROCESS TO LARGE RECTANGULAR SUBSTRATE AND PLASMA PROCESSING METHOD THEREOF

摘要

PURPOSE: A plasma processing apparatus for performing plasma processes such as a film deposition process, a surface modification process, and an etching process to a large rectangular substrate and a plasma processing method thereof are provided to form plasma with high density and low electron temperature by improving a structure of the plasma processing apparatus. CONSTITUTION: A plasma processing apparatus includes an electromagnetic wave source(3) for generating an electromagnetic wave, a plurality of waveguides(1), a plurality of slots(2) used as a waveguide antenna, an electromagnetic wave radiation window(4) formed with a dielectric body, and a vacuum chamber(5). The plasma processing apparatus generates plasma by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window. The waveguides are arranged in contact with each other. The plasma processing apparatus further includes an electromagnetic wave distributing waveguide(17) to distribute the electromagnetic wave of the electromagnetic wave source into the plural waveguides. The electromagnetic wave radiation window is used as one part of a wall of the vacuum chamber in order to maintain a vacuum state between the electromagnetic wave radiation window and the other part of the wall of the vacuum chamber.