首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Single-crystal growth of iridium with [100] and [110] orientations by electron beam zone melting
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Single-crystal growth of iridium with [100] and [110] orientations by electron beam zone melting

机译:通过[100]和[110]通过电子束区熔化的铱的单晶生长

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Single crystal of iridium with two different orientations, [100] and [110] has been successfully prepared by electron-beam floating zone melting (EBFZM). The experimental results showed that the iridium single crystal with [100] orientation could be directly prepared without seeding at a low growth rate below 3 mm/min, and the single crystal with [110] orientation could be only obtained by seeding. The competitive growth of the bicrystal demonstrated that the [100] orientation of the iridium single crystal can overwhelm that of the [110] orientation at a growth rate of 2 mm/min. Moreover, the interface growth undercooling including curvature undercooling and kinetic undercooling has been calculated for iridium single crystal with these two orientations. The calculated data and analysis agree well with the experimental results.
机译:通过电子束浮区熔融(EBFZM)成功地制备了具有两种不同取向的铱的单晶,[100]和[110]。 实验结果表明,在低于3mm / min的低生长速率下,可以直接制备具有[100]取向的铱单晶,无需播种,并且具有[110]取向的单晶仅通过播种获得。 BICrystal的竞争生长证明了铱单晶的[100]取向可以以2mm / min的生长速率压倒[110]取向。 此外,已经用这两个取向计算了包括曲率过冷和动力学过冷却的界面生长过冷和动力学过冷。 计算的数据和分析与实验结果很好。

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