Hybrid Orientation Substrate Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100) and (110) Areas on Si(100) Substrates

摘要

Hybrid orientation structure of CeO_2(100) and CeO_2(110) regions on Si(100) substrates is attained using electron beam induced orientation selective epitaxial (OSE) growth by reactive magnetron sputtering. CeO_2(100) layers grow in an area simultaneously irradiated by electron beams during the growth process, whereas CeO_2(110) layers grow in the area without electron irradiation, which result from surface potential differences. The spatially controlled OSE grown samples are made on Si(100) substrates with various resistvities. XRD measurements are carried out to obtain the lateral orientation mapping within the epitaxial layer surfaces and reveal existence of the transition regions in between the above mentioned two orientation areas. The width of the transition regions is clarified to reduce proportionally with the logarithm of underlying Si substrate resistivity. A surface potential distribution model is proposed to explain the results.