Self-heating effects and hot carrier degradation in In0.53Ga0.47As gate-all-around MOSFETs

摘要

In0.53Ga0.47As based gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) are being pursued as a promising solution to high speed ultra-large-scale integration chip design because of improved gate-channel electrostatic, excellent immunity to short channel effects, high carrier mobility and increased drain current. However, the GAA devices are highly prone to self-heating, and hot carrier injection (HCI) induced effects because of the absence of a proper heat take out mechanism. In this paper, 3-D electrothermal simulations are performed on In0.53Ga0.47As GAA MOSFETs using the hydrodynamic model to access the impact of self-heating on the electrical characteristics of the device. The Fiegna hot-carrier injection model is used in simulations to estimate the HCI into the oxide region. A thorough understanding of dependencies of lattice temperature and carrier temperature on spacer length, drain voltage, gate voltage, and thermal contact resistance is acquired. HCI degradation dependence on thermal contact resistance is also extensively studied using the Sentauras based TCAD simulator.