Structural, optical and thermal properties of V-doped GaN thin films grown by MOCVD technique

摘要

V-doped GaN epitaxial thin films were grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrate. Structure, surface morphology, gap energy, thermal conductivity, and thermal diffusivity are studied. The results show that the gap energy does not change with this V-doping concentration but its thermal conductivity decreases to a factor of about 3.5 from 128 to 36 W/mK. This behavior may be associated with the structural changes that are taking place with the addition of V content, showing that the material presents a good performance asked in certain applications.