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Comparison of external electric and magnetic fields effect on binding energy of hydrogenic donor impurity in different shaped quantum wells

机译:外部电场对不同成形量子阱中氢供体杂质结合能的影响

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摘要

The effects of external electric and magnetic fields on the ground state binding energy of hydrogenic donor impurity are compared in square, V-shaped, and parabolic quantum wells. With the effective-mass envelope-function approximation theory, the ground state binding energies of hydrogenic donor impurity in InGaAsP/InP QWs are calculated through the plane wave basis method. The results indicate that as the quantum well width increases, the binding energy changes most fast in SQW. When the well width is fixed, the binding energy is the largest in VQW for the donor impurity located near the center of QWs. For the smaller and larger well width, the electric field effect on binding energy is the most significant in VQW and SQW, respectively. The magnetic field effect on binding energy is the most significant in VQW. The combined effects of electric and magnetic fields on the binding energy of hydrogenic donor impurity are qualitative consistent in different shaped QWs.
机译:在方形,V形和抛物面量子孔中将外部电场与散氢供体杂质接地末端结合能的影响。 利用有效质量包络函数近似理论,通过平面波基法计算InGaASP / InP QW中的氢供体杂质的接地状态结合能。 结果表明,随着量子阱宽度的增加,在SQW中最快的结合能量变化。 当井宽固定时,粘合能量是位于QWS中心附近的供体杂质的VQW中最大的。 对于较小且较大的井宽,电场对绑定能量的影响分别是VQW和SQW中最显着的。 磁场对绑定能量的影响是VQW中最重要的。 电场和磁场对氢供体杂质结合能的组合效果是不同形状QW的定性一致。

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    Qufu Normal Univ Dept Phys Shandong Prov Key Lab Laser Polarizat &

    Informat Qufu 273165 Peoples R China;

    Qufu Normal Univ Dept Phys Shandong Prov Key Lab Laser Polarizat &

    Informat Qufu 273165 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
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