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机译:表面悬空键对磷掺杂SiC纳米线运输性能的影响
Key Laboratory for Microstructural Material Physics of Hebei Province School of Science Yanshan University;
Key Laboratory for Microstructural Material Physics of Hebei Province School of Science Yanshan University;
Key Laboratory for Microstructural Material Physics of Hebei Province School of Science Yanshan University;
Key Laboratory for Microstructural Material Physics of Hebei Province School of Science Yanshan University;
Key Laboratory for Microstructural Material Physics of Hebei Province School of Science Yanshan University;
Key Laboratory for Microstructural Material Physics of Hebei Province School of Science Yanshan University;
School of Materials Science and Engineering Beijing Institute of Technology;
Phosphorus doped SiCNWs; Transport properties; Surface dangling bonds; Hydrogen passivation;
机译:表面悬空键对磷掺杂SiC纳米线运输性能的影响
机译:从表面悬空键的量子尺寸效应的抑制:不同形态纳米线的第一个原理研究
机译:氢化2H-SiC表面孤立的悬空键的性质
机译:超缩放的磷掺杂硅纳米线中的量子传输
机译:通过紧密结合键模型研究了掺硼硅中缺陷的形成和传输性质。
机译:CBE生长的InAs纳米线场效应晶体管中传输特性的Se掺杂依赖性
机译:半金属硅纳米线:多个表面悬挂键和 非磁性掺杂
机译:硅的表面化学 - 悬空键的行为。