Silicon oxide layer reduced in dangling bonds through treatment with hypofluorous acid, process for growing silicon oxide layer and method for deactivating dangling bonds therein

摘要

Non-bound combination of the silicon atoms of (2) are likely to occur in the silicon oxide grown on the silicon wafer due to oxygen deficiency; Hypophosphorous acid fluoride is introduced into the silicon oxide, hypophosphorous acid fluoride is different from the non-bound bonded through a diffusion; Hypophosphorous acid fluoride fluorine is decomposed into atoms 7 and the hydroxy group in (8/9), the fluorine atom (7) and the hydroxyl group of (8/9) is disabled, and non-bound binding of the silicon atoms of (2); Although ten thousand and one electric charge to be injected into the silicon oxide, is disabled because the broken silicon oxide layer is stable and highly reliable.