机译:光可配置的玻璃聚合蚀刻掩模:Photof流化驱动的重新配置和边缘矩形化
Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea;
Department of Materials Science and Engineering University of Pennsylvania 3231 Walnut Street Philadelphia PA 19104 USA;
Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea;
Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea;
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea;
Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea;
azopolymers; etch masks; photofluidization; photo-reconfiguration; rectangularization;
机译:光可配置的玻璃聚合蚀刻掩模:Photof流化驱动的重新配置和边缘矩形化
机译:硬掩模对双图案光刻中光刻-平版蚀刻工艺反射率的影响
机译:熔融石英刻蚀速率与刻蚀掩模开口直径的关系
机译:使用Mask Etcher IV进行石英蚀刻工艺以提高蚀刻深度的线性度和均匀性
机译:高度芳族单分子蚀刻掩模的抗蚀刻性机理和发展:迈向分子光刻。
机译:移动无线传感器网络的平均共识:重量矩阵保证收敛而无需重新配置边缘权重
机译:使用钌膜作为蚀刻面罩的高度选择性和垂直蚀刻二氧化硅
机译:利用聚甲基丙烯酸甲酯(pmma)蚀刻掩模对二硫化钼(mos2)进行反应离子蚀刻的工艺开发。