Magnetic Field Effect on Threshold Voltage for Ultrathin Silicon Gate-All-Around Nanowire Field-Effect-Transistors

摘要

Gate-all-around silicon nanowire field-effect-transistors (GAA Si NWFETs) received much interest in nanoscale electronic based systems and sensor applications. In this work, the threshold voltage for the ultrathin lightly doped n-channel Si GAA NWFETs with magnetic field effect is investigated. The study begins by modeling the inversion charge density including confinement-effect in the channel cross-section of the device. Three-dimensional (3D) potential model including magnetic field interaction is studied in this work. Threshold voltage and short channel effects such as threshold voltage roll-off and drain induced barrier lowering are also analyzed at different channel lengths. The obtained analytical results have been verified with 3D COMSOL numerical simulation results. The impact of the external magnetic field is well observed in the energy dispersion relations. However, the magnetic field has no considerable effect on the threshold voltage neither the short channel behavior for the proposed Si GAA NWFET even with increasing the biasing values and at different device parameters.