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Structural, optical and electrical characterization of HgxCd1-xTe polycrystalline films fabricated by two-source evaporation technique

机译:双源蒸发技术制备的HgxCd1-xTe多晶薄膜的结构,光学和电学表征

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摘要

Two-source thermal evaporation technique was used to prepare HgXCd1-xTe thin films onto scratch free transparent glass substrates. The structural investigations revealed that thin films were polycrystalline in nature. Transmittance measurements in the wavelength range (500-2700 nm) were used to calculate optical constants. The analysis of the optical absorption data showed that the optical band gap was of indirect type. In the composition range 0.05 < x < 0.25 the films exhibited an optical band gap between 1.29 and 0.98 eV. In the same composition range the films were p-type and exhibited a resistivity, which varied between 102 and 10(-1) Omega-cm.
机译:采用两源热蒸发技术在无划痕的透明玻璃基板上制备HgXCd1-xTe薄膜。结构研究表明,薄膜本质上是多晶的。使用波长范围(500-2700 nm)中的透射率测量值来计算光学常数。对光吸收数据的分析表明,光学带隙是间接类型的。在0.05 <x <0.25的组成范围内,膜表现出在1.29和0.98eV之间的光学带隙。在相同的组成范围内,薄膜为p型,并显示出电阻率,在102和10(-1)Ω-cm之间变化。

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