首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Behavior of phosphorus impurities during Czochralski growth of high-purity germanium single crystals
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Behavior of phosphorus impurities during Czochralski growth of high-purity germanium single crystals

机译:高纯锗单晶在直拉晶体生长过程中磷杂质的行为

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摘要

The effect of evaporation of phosphorus impurities from the melt is investigated as well as the contaminating effect of quartz glass crucibles on residual content and distribution of this impurities by length of high-purity germanium single crystals. The residual content of phosphorus impurities is mainly influenced by the contaminating effect of crucible material and its distribution by length of crystals is described by the model accounting for the impurities income from crucible material.
机译:研究了磷杂质从熔体中蒸发的影响,以及石英玻璃坩埚对杂质含量的残留量和分布的影响,这些杂质的分布和分布以高纯锗单晶的长度为准。磷杂质的残留含量主要受坩埚材料的污染作用影响,其模型的长短随结晶长度的分布而定,说明了来自坩埚材料的杂质收入。

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