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Characterization of dislocation structures in [(1)over-bar11] copper single crystals using electron channelling contrast technique in SEM

机译:[(1)over-bar11]铜单晶中位错结构的表征

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The dislocation structures induced by low-plastic-strain-amplitude cyclic deformation of [(1) over bar 11] multiple-slip-oriented Cu single crystals were investigated using electron channelling contrast (ECC) technique in scanning electron microscopy (SEM). At a low plastic strain amplitude gamma(pl) of 8.8 x 10(-5), the saturated dislocation structure is mainly composed of labyrinth-like vein structure (or irregular labyrinths), and the cyclic hardening behavior at such a low gamma(pl) is interpreted as being the result of dislocation multiplication by a Frank-Read mechanism. As gamma(pl) increases to 4.0 x 10(-4), the unsaturated dislocation structure exhibits two kinds of distinctive configurations, i.e., dislocation walls and misoriented cells. Interestingly, these misoriented dislocation cells are strictly aligned along the primary slip plane (111), constituting a unique persistent slip band (PSB) structure. Here, these cells are thus called PSB cells. In addition, there is a locally distinctive region comprising some cells having a recrystallization-like feature in the whole structure of PSB cells. The formation of the structure of PSB cells is discussed.
机译:在扫描电子显微镜(SEM)中,采用电子通道对比度(ECC)技术研究了[(1)在棒11上]的低塑性应变振幅循环变形引起的位错结构。在8.8 x 10(-5)的低塑性应变幅度gamma(pl)下,饱和位错结构主要由迷宫状的脉状结构(或不规则的迷宫形)组成,并且在这样低的gamma(pl)下的循环硬化行为)被Frank-Read机制解释为位错相乘的结果。当γ(pl)增加到4.0×10(-4)时,不饱和位错结构表现出两种不同的构型,即位错壁和取向错误的单元。有趣的是,这些取向不正确的位错单元沿着主滑移面(111)严格对齐,构成了唯一的持久滑移带(PSB)结构。因此,这些单元在这里被称为PSB单元。另外,在PSB单元的整个结构中存在局部独特区域,该区域包括一些具有重结晶状特征的单元。讨论了PSB细胞结构的形成。

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