首页> 外文期刊>Zeitschrift fur Metallkunde >Study of fatigue dislocation structures in [233] coplanar double-slip-oriented copper single crystals using SEM electronic channelling contrast
【24h】

Study of fatigue dislocation structures in [233] coplanar double-slip-oriented copper single crystals using SEM electronic channelling contrast

机译:[233]共面双滑取向铜单晶疲劳位错结构的SEM电子通道对比研究

获取原文
获取原文并翻译 | 示例
           

摘要

Dislocation structures in fatigued [233] coplanar double-slip-oriented copper single crystals were studied using the electron channelling contrast technique in scanning electron microscopy, especially focusing on the observations of the microstructures of persistent slip bands and deformation bands. It was found that, at low plastic strain amplitudes (γ{sub}(pl) < 3.4 × 10{sup}(-4)), the dislocation structures of the [233] copper single crystal comprise a majority of elongated veins and a few elongated cells along the primary slip plane (111). As γ{sub}(pl) increases to 6.2 × 10{sup}(-4), a special persistent slip band structure consisting of irregular dislocation cells, rather than generally-observed ladders in single-slip crystals, was found to form, which is responsible for the occurrence of a quasi-plateau in the cyclic stress-strain curve of the [233] crystal. When γ{sub}(pl) < 3.5 × {sup}(-3), different dislocation microstructures in deformation bands, such as wall-like features, dislocation walls, elongated cells and dense dislocation cells, were found in the cyclically saturated [233] crystal. Effects of the crystallographic orientation, the applied plastic strain amplitude, the accumulated plastic strain and the strain localization in the crystal on the microstructure of deformation bands are summarized and discussed.
机译:在扫描电子显微镜中,使用电子沟道对比技术研究了疲劳的[233]共面双滑取向铜单晶中的位错结构,尤其着重观察了持久滑移带和形变带的微观结构。结果发现,在低塑性应变幅度下(γ{sub}(pl)<3.4×10 {sup}(-4)),[233]铜单晶的位错结构包括大部分细长的脉和沿主滑移平面(111)的拉长单元很少。当γ{sub}(pl)增加到6.2×10 {sup}(-4)时,发现形成了一种特殊的持久滑带结构,该结构由不规则的位错单元而不是通常在单滑动晶体中观察到的梯子组成,这是导致[233]晶体的循环应力-应变曲线中出现准平台的原因。当γ{sub}(pl)<3.5×{sup}(-3)时,在循环饱和的[[]中发现了不同的形变带中的位错微结构,如壁状特征,位错壁,细长的单元格和致密的位错单元。 233]水晶。总结并讨论了晶体取向,施加的塑性应变幅度,累积的塑性应变和晶体中的应变局部化对变形带微观结构的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号