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机译:(1.100),(0001)和(000.1)GaN /水交界处的耗尽层内置场和其在半导体纳米线水分裂中的作用
Department of Applied Physics Stanford University Stanford CA 94305 USA;
Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology Wybrze?e Wyspiańskiego 27 Wroc?aw PL-50370 Poland;
Faculty of Microsystem Electronics and Photonics Wroclaw University of Science and Technology Janiszewskiego 11-17 Wroc?aw PL-50372 Poland;
Institute of High-Pressure Physics Polish Academy of Sciences Soko?owska 29/37 Warsaw PL 01142 Poland;
Institute of High-Pressure Physics Polish Academy of Sciences Soko?owska 29/37 Warsaw PL 01142 Poland;
Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology Wybrze?e Wyspiańskiego 27 Wroc?aw PL-50370 Poland;
c-plane; GaN; m-plane; photoelectrolysis; surface states;
机译:(1.100),(0001)和(000.1)GaN /水交界处的耗尽层内置场和其在半导体纳米线水分裂中的作用
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