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Operando Analysis of Semiconductor Junctions in Multi-Layered Photocathodes for Solar Water Splitting by Impedance Spectroscopy

机译:阻抗光谱法分层多层光电阴影中半导体结的Operando分析

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摘要

Although electrochemical impedance spectroscopy (EIS) is a powerful technique for investigating optoelectronic devices, realistic equivalent circuit (EC) models suitable for multi-layered water splitting electrodes have rarely been reported due to their complex nature. In the present study, the utility of the EIS method for investigating multi-layered photocathodes for photoelectrochemical water splitting is demonstrated. By analyzing the EIS data of TiO2-coated Sb2Se3 photocathodes, one is able to obtain information about the constituent semiconductors and interfaces such as recombination processes, carrier lifetimes, doping densities, and flat band potentials under operando conditions. The charge transfer time to the electrolyte is also extracted from the EIS data and confirmed by transient photocurrent decay measurements. In addition, the method is successfully applied to other photocathodes with different classes of light absorber, such as metal oxides (Cu2O) and crystalline Si, to compare the device characteristics under real operational conditions. It is shown that the lifetime of photo-generated carriers in the Si photocathode is much higher than those of the Sb2Se3 and Cu2O photocathodes. It is believed that the EIS analysis method presented in this study will become a powerful routine characterization technique for discovering the limiting factors in a wide range of photo-electrosynthetic as well as photovoltaic devices.
机译:尽管电化学阻抗光谱(EIS)是用于研究光电器件的强大技术,但由于其复杂性,很少报道适用于多层水分离电极的现实等效电路(EC)模型。在本研究中,证明了用于研究光电化学水分解的多层光电阴极的EIS方法的效用。通过分析TiO2涂覆的SB2Se3光电阴极的EIS数据,能够在Operando条件下获得有关组成半导体和诸如复合过程,载流子寿命,掺杂密度和扁平带电位的组成半导体和界面的信息。还从EIS数据中提取电解质的电荷转移时间并通过瞬态光电流衰减测量证实。此外,该方法成功地应用于具有不同类别的光吸收剂的其他光电阴影,例如金属氧化物(Cu2O)和结晶Si,以比较真实的操作条件下的器件特性。结果表明,Si光电阴极中的光产生载体的寿命远高于Sb2se3和Cu2O光电处理的寿命。据信,本研究中提出的EIS分析方法将成为一种强大的例行表征技术,用于在广泛的光电合成和光伏器件中发现限制因素。

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