FABRICATION METHOD OF GAN NANOWIRE PHOTOELECTRODE STRUCTURE FOR PHOTOELECTROCHEMICAL WATER SPLITTING

摘要

Disclosed is a method of manufacturing a gallium nitride nanowire photoelectrode structure for electrochemical water decomposition to increase water decomposition efficiency by maximizing a hydrogen generation reaction by maximizing a contact area between a gallium nitride nanowire photoelectrode and water A method of manufacturing a gallium nitride nanowire photoelectrode structure for electrochemical water decomposition according to the present invention comprises the steps of: (a) forming a metal catalyst layer on a substrate; (b) forming circular metal nanoparticles on the substrate by first annealing the substrate on which the metal catalyst layer is formed; (c) sequentially forming a Ga thin film layer and an In thin film layer on the substrate on which the circular metal nanoparticles are formed; (d) forming polygonal alloy nanoparticles by secondary annealing the substrate on which the Ga thin film layer and the In thin film layer are formed; And (e) forming a gallium nitride nanowire photoelectrode by growing polygonal nanowires using the polygonal alloy nanoparticles as seeds.