Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (vol 6, 1900042, 2019)

Mittmann Terence; Materano Monica; Lomenzo Patrick D.; Park Min Hyuk; Stolichnov Igor; Cavalieri Matteo; Zhou Chuanzhen; Chung Ching-Chang; Jones Jacob L.; Szyjka Thomas; Mueller Martina; Kersch Alfred; Mikolajick Thomas; Schroeder Uwe

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Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (vol 6, 1900042, 2019)

机译：通过溅射沉积的未掺杂的HFO2薄膜的铁电相起源（Vol 6,900042,2019）

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《Advanced materials interfaces》 |2019年第20期|共1页
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Mittmann Terence; Materano Monica; Lomenzo Patrick D.; Park Min Hyuk; Stolichnov Igor; Cavalieri Matteo; Zhou Chuanzhen; Chung Ching-Chang; Jones Jacob L.; Szyjka Thomas; Mueller Martina; Kersch Alfred; Mikolajick Thomas; Schroeder Uwe;
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1. Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (vol 6, 1900042, 2019) [J] . Mittmann Terence, Materano Monica, Lomenzo Patrick D., Advanced materials interfaces . 2019,第20期

机译：通过溅射沉积的未掺杂的HFO2薄膜的铁电相起源（Vol 6,900042,2019）
2. Film thickness-dependent ferroelectric polarization switching dynamics of undoped HfO2 thin films prepared by atomic layer deposition [J] . Choi Se-Na, Moon Seung-Eon, Yoon Sung-Min CERAMICS INTERNATIONAL . 2019,第17aPta2期

机译：通过原子层沉积制备的未掺杂HFO2薄膜的膜厚度依赖性铁电偏振切换动力学
3. Obvious ferroelectricity in undoped HfO2 films by chemical solution deposition [J] . Chen Haiyan, Chen Yonghong, Tang Lin, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2020,第8期

机译：通过化学溶液沉积未掺杂的HFO2膜中明显的铁电性
4. EFFECT OF SPUTTERING TIME AND RF POWER ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS (UNDOPED) SILICON FILMS DEPOSITED ON CRYSTALLINE SILICON BY RF SPUTTERING [C] . MANUEL J. CORONADO, A. SINGH International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN) . 1995

机译：溅射时间和射频功率对射频溅射沉积在晶体硅上的非晶硅（非掺杂）硅膜电流电压特性的影响
5. Composition/structure/property relations of ferroelectric lead-lanthanum-titanate thin films deposited by multi-ion-beam reactive sputtering. [D] . Fox, Glen Richard. 1992

机译：通过多离子束反应溅射沉积的铁电钛酸铅镧薄膜的组成/结构/性质关系。
6. Structure and piezo-ferroelectricity relationship study of (K0.5Na0.5)0.985La0.005NbO3 epitaxial films deposited on SrTiO3 by sputtering [O] . H´Linh H´Mŏk, E. Martínez-Aguilar, J. J. Gervacio-Arciniega, -1

机译：溅射沉积在SrTiO3上的（K0.5Na0.5）0.985La0.005NbO3外延膜的结构和压电-铁电关系的研究
7. Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering [O] . Terence Mittmann, Monica Materano, Patrick D. Lomenzo, 2019

机译：通过溅射沉积的未掺杂HFO 2薄膜的铁电相起源

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (vol 6, 1900042, 2019)

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