EFFECT OF SPUTTERING TIME AND RF POWER ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS (UNDOPED) SILICON FILMS DEPOSITED ON CRYSTALLINE SILICON BY RF SPUTTERING

摘要

The samples A, B, C, D, E, and F were fabricated, depositing films of amorphous silicon (a-Si) by RF Sputtering on p-type crystalline silicon (c-Si) substrates, besides the control sample M/S which was free of a-Si. Ohmic contacts to c-Si substrates were obtained by sputter deposition of Al, followed by 15 min. annealing at 500℃ Top Ni contacts were prepared by thermal deposition The room temperature current-voltage (I-V) characteristics of all the samples were measured in the range from -10V to +10V. The experimental data was described by a relation of the form J α V~m with 0.5 < m < 26 under reverse bias and 1.5 < m < 5.7 under forward bias. In the region with m 2, the I-V data also fitted well to Schottky equation which permitted the determination of barrier heights.