Performance of semiconductor planar microcavities for Raman-scattering enhancement

摘要

We report single and double optical resonant Raman scattering in both complete (high-Q) and without top Bragg reflector (low-Q) semiconductor planar microcavities. A calculation of the Raman efficiency relative amplifying capabilities of these photonic structures is presented, and compared with the experiments. These results indicate that a competition between better light confinement and reduced angular acceptance as the cavity finesse is increased determines the performance of a cavity for enhanced Raman signals. [References: 13]