机译:从WSE2-WS2横向异质结的II型接口中热力学演变特性的原位探讨
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
East China Normal Univ Key Lab Polar Mat &
Devices MOE Shanghai 200241 Peoples R China;
WSe2-WS2 lateral heterojunction; KPFM; Raman scattering; PL;
机译:从WSE2-WS2横向异质结的II型接口中热力学演变特性的原位探讨
机译:在p型CdTe膜上的N型Cds纳米线的催化剂和无催化剂低温在p型CdTe膜和P-N异质结石上
机译:界面修饰对p型CuAlO_2 / n型Si异质结器件电和光电性能的影响
机译:垂直磁场中侧表面超晶格的P型异质条件的光学和传输性能
机译:InSb-InAs纳米线III型异质结的电学性质和能带图。
机译:在p型CdTe薄膜上无催化剂和无模板的n型CdS纳米线的低温原位生长和p-n异质结性能
机译:波纹外延横向过度生长形成的直接INP / SI异质结的光学和界面性质