FORMATION OF P-TYPE II-VI COMPOUND SEMICONDUCTOR HETEROJUNCTION INTERFACE

摘要

PURPOSE: To make it possible to form a heterojunction interface having a low contact resistance by a method wherein recesses and projections of a depth of 2 specified value or higher are formed in and on the heterojunction interface and the like. ;CONSTITUTION: Recesses and projections of a depth of 50nm or deeper are formed in an on a first P-type II-VI compound semiconductor later 2 and a second P-type II-I compound semiconductor layer 5 is formed on the layer 2 via a superlattice layer 4, which consists of the layers 8 and 5, or a mixed crystal layer. For example, an SiO₂ film 3 is deposited on a semi-insulative GaAs substrate 1 and an SiO₂ pattern is formed by photolithography technique and a wet etching. Then, V-shaped grooves of a depth of 50nm are formed in the substrate 1 by a wet etching. After that, a molecular beam epitaxial growth of a P-type ZnSe layer 2, a P-type ZnSe/ZnTe superlattice layer 4 and a P-type ZnTe cap layer 5 is performed. Lastly, a P-type electrode 14 is formed on the surface of the layer 5.;COPYRIGHT: (C)1996,JPO