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Digital image analysis for measuring nanogap distance produced by adhesion lithography

机译:用粘合光刻产生测量纳米隙距的数字图像分析

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A simple digital image analysis for measuring nanogap distance produced by adhesion lithography is proposed. Adhesion lithography produces metal electrodes with sub-15 nm undulated space and mu m to mm scale width without using electron beam lithography. Although the process has been rapidly improved in recent years, there has been no generalized procedure to evaluate the nanogap distance. In this study, we propose a procedure to evaluate a nanogap electrode with large width/gap distance ratios (>1000). The procedure is to determine the average distance of nanogap space from the area and the perimeter of the space by the analysis of the grayscale image. This procedure excludes any arbitrariness of the estimation and gives quantitative comparison of nanogap electrodes produced by different processes.
机译:提出了一种用于测量粘合光刻产生的纳米坡距离的简单数字图像分析。 粘合光刻产生具有亚15nm波状空间的金属电极,MU M至mm刻度宽度而不使用电子束光刻。 近年来该过程已迅速改善,但没有一般性的程序来评估纳米隙距距离。 在本研究中,我们提出了一种方法来评估具有大宽度/间隙距离比(> 1000)的纳米隙电极。 该过程是通过分析灰度图像来确定来自区域的区域和空间周边的平均距离。 该过程不包括估计的任何任意性,并提供不同方法产生的纳米隙电极的定量比较。

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