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Synthesis of hexagonal graphene on polycrystalline Cu foil from solid camphor by atmospheric pressure chemical vapor deposition

机译:常压化学气相沉积法在固体樟脑铜箔上合成六角石墨烯。

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摘要

Understanding of graphene nucleation and growth on a metal substrate in chemical vapor deposition (CVD) process is critical to obtain high-quality single crystal graphene. Here, we report synthesis of individual hexagonal graphene and their large cluster on Cu foil using solid camphor as a carbon precursor in the atmospheric pressure CVD (AP-CVD) process. Optical and scanning electron microscopy studies show formation of hexagonal graphene crystals across the grain, grain boundaries and twin boundaries of polycrystalline Cu foil. Electron backscattered diffraction analysis is carried out before and after the growth to identify Cu grain orientation correlating with the graphene formation. The influence of growth conditions and Cu grain structure is explored on individual hexagonal graphene formation in the camphor-based AP-CVD process.
机译:了解石墨烯在化学气相沉积(CVD)工艺中在金属基材上的形核和生长对于获得高质量的单晶石墨烯至关重要。在这里,我们报告了在常压CVD(AP-CVD)工艺中使用固态樟脑作为碳前体在Cu箔上合成单个六角形石墨烯及其大簇。光学和扫描电子显微镜研究表明,在多晶铜箔的晶粒,晶界和孪晶界上形成了六边形石墨烯晶体。在生长前后进行电子背散射衍射分析,以确定与石墨烯形成相关的Cu晶粒取向。探索了生长条件和铜晶粒结构对基于樟脑的AP-CVD工艺中单个六角形石墨烯形成的影响。

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