首页> 外国专利> GRAPHENE SYNTHESIS BY SUPPRESSING EVAPORATIVE SUBSTRATE LOSS DURING LOW PRESSURE CHEMICAL VAPOR DEPOSITION

GRAPHENE SYNTHESIS BY SUPPRESSING EVAPORATIVE SUBSTRATE LOSS DURING LOW PRESSURE CHEMICAL VAPOR DEPOSITION

机译:低压化学气相沉积过程中抑制挥发物基质损失的石墨烯合成

摘要

Method for synthesizing large single-crystal graphene films by suppressing evaporative substrate loss in chemical vapor deposition, and graphene films synthesized thereby. The substrate may be configured as a tube prior to exposure to an organic compound at high temperature. Low flow rate of the gaseous carbon source may be employed, and this flow rate may be increased after an initial nucleation period.
机译:通过抑制化学气相沉积中的蒸发衬底损失来合成大的单晶石墨烯膜的方法,以及由此合成的石墨烯膜。在高温下暴露于有机化合物之前,可以将基板配置为管。可以使用气态碳源的低流速,并且可以在初始成核期之后增加该流速。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号