Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs

摘要

Al0.26Ga0.73N/GaN/Si HEMTs with and without SiO2/SiN passivation, were characterized by Deep Level Transient Spectroscopy (DLTS), Capacitance-Voltage (CeV) and Current-Voltage (IeV) measurements to understand the electronic traps in AlGaN/GaN/Si HEMTs and to make a comparative study before and after passivation. Three Deep-level electron traps were observed in our sample with an activation energy 0.054 eV, 0.31 eV and 0.49 eV. The localization and the identification of these traps are reported. (C) 2015 Elsevier B.V. All rights reserved.