Needlelike Bicrystalline GaN Nanowires with Excellent Field Emission Properties

摘要

Large-yield and crystalline GaN nanowires have been synthesized on a Si substrate via a simple thermal evaporation process.The majority of the GaN nanowires has bicrystalline structures with a needlelike shape,a triangular prism morphology,and a uniform diameter of approx 100 nm.Field-emission measurements show that the bicrystalline GaN nanowires with sharp tips have a lower turn-on field of approx 7.5 V/mum and are good candidates for low-cost and large-area electron emitters.It is believed that the excellent filed emission property is attributed to the bicrystalline structure defects and sharp tips.