Excellent Field-Emission Properties of P-Doped GaN Nanowires

摘要

GaN nanowires with P doping were synthesized via a simple thermal evaporation process.The P-doped GaN nanowires have average diameters of approx 100 nm and lengths up to tens of micrometers.Scanning electron microscope and high-resolution field-emission transmission electron microscope analyses revealed that P doping results in a rough surface morphology of GaN nanowires.Field-emission measurements showed that P doping effectively decreases the turn-on field of GaN nanowire to 5.1 V/mum,holding promise of application as an electron emitter.The rough surface is responsible for enhancement of the field-emission properties of GaN nanowires.