Transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure

摘要

The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening. (C) 2007 Elsevier B.V. All rights reserved.