A compound semiconductor shallow multiquantum well structure coupled with an asymmetric Fabry-Perot resonance structure

摘要

The present invention relates to a compound semiconductor multiple quantum well structure in which an asymmetric Fabry-Perot resonance structure and a shallow quantum well structure are mixed to enable a nonlinear optical bistable element having an extremely high switching speed and a high optical ON / OFF intensity ratio . The conventional deep multi-quantum well structure has a problem that the quantum well escape time of the carriers is long and the switching speed of the optical device made by this structure is slow.;In addition, the structure in which the conventional I / 4 stack layer, which is not an asymmetric Fabry-Perot structure, is applied only as a bottom mirror layer has a problem of reliability due to low noise margin when applied to an optical system due to low on / off intensity ratio of output light.;The present invention provides a shallow quantum well structure by lowering the molar concentration of Al in the GaAs / AlxGal-xAs multiple quantum well in the intrinsic region of the PI (MQW)-N diode (x = 5% The phenomenon allows the switching speed to be made very fast by bringing the quantum well escape times of the carriers to very short.;In addition, the asymmetric Pbrie-Ferro-Al2O3 / AlGaN / 4 stack layer, which is a bottom mirror layer with a high total reflectance of the PI (MQW)-N diode, Resonance structure so that the on / off intensity ratio of the optical output can be greatly increased.;As a result, it is a compound semiconductor hybrid structure in which a shallow quantum well structure for improving the switching speed and an asymmetric Fabry-Perot resonance structure for improving the on / off intensity ratio of the output light are simultaneously mixed.