Structural and optical investigations of Al_xGa _(1-x)As:Si/GaAs(1 0 0) MOCVD heterostructures

摘要

Al_xGa_(1-x)As:Si/GaAs(1 0 0) heterostructure and homoepitaxial GaAs:Si/GaAs(1 0 0) structures grown by MOCVD were investigated. The changes observed in our experiments with highly doped Al_xGa _(1-x)As alloys, led not only to the reconstruction of the electron density and formation of deep levels (DX-centers) with subsequent relaxation of the crystal lattice in the alloy, but also indicate at the formation of quaternary Al_xGa_(1-x-y)Si_(yz)As_(1-z) substitution-type alloy grown on GaAs(1 0 0).