Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures

摘要

We study the energy structure of two-dimensional holes in p-type singleAl_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field.Photoluminescence measurments with low densities of excitation power revealrich spectra containing both free and bound-carrier transitions. Theexperimental results are compared with energies of valence-subband Landaulevels calculated using a new numerical procedure and a good agreement isachieved. Additional lines observed in the energy range of free-carrierrecombinations are attributed to excitonic transitions. We also consider therole of many-body effects in photoluminescence spectra.