GAAS/INGAAS AXIAL HETEROSTRUCTURE FORMATION IN NANOPILLARS BY CATALYST - FREE SELECTIVE AREA MOCVD

摘要

An axially hetero-structured nanowire includes a first segment that includes GaAs, and a second segment integral with the first that includes In_xGa_1-xAs. The parameter x has a maximum value x-max within the second segment that is at least 0.02 and less than 0.5. A nanostructured semiconductor component includes a GaAs (111)B substrate, and a plurality of nanopillars integral with the substrate at an end thereof. Each of the plurality of nanopillars can be a nanowire according to an embodiment of the current invention. A method of producing axially hetero-structured nanowires is also provided.