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Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy

机译:反应磁控溅射外延在Si(111)衬底上生长的InxAl1-xN核壳纳米棒的结构和组成演变

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摘要

Catalystless growth of InxAl1-xN core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl1-xN nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl1-xN film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl1-xN is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl1-xN[0001]//Si[111] and InxAl1-xN[11 (2) over bar0]//Si[1 (1) over bar0] by removing the native SiOx layer from the substrate.
机译:InxAl1-xN核壳纳米棒的无催化剂生长已通过反应磁控溅射外延到Si(111)衬底上实现。通过扫描电子显微镜,X射线衍射,扫描透射电子显微镜和能量色散X射线光谱对样品进行表征。发现InxAl1-xN纳米棒的组成和形态受生长温度的强烈影响。在较低的温度下,生长的材料会形成分离良好且均匀的,具有高In含量核的核壳纳米棒,而在较高的温度下沉积会形成具有低In-含量的垂直畴的富Al InxAl1-xN膜。铝富集的炮弹融合在一起的结果。核心(区域)的厚度和In含量随着生长温度的降低而增加。 InxAl1-xN的生长可追溯到初始阶段,表明核-壳纳米结构的形成开始非常接近界面。建议将由于旋节线分解而引起的相分离作为所得结构的起源。此外,纳米棒和基板的面内晶体学关系已从具有织构的纤维修改为具有InxAl1-xN [0001] // Si [111]和InxAl1-xN [11(2)的外延关系的外延生长。 bar0] // Si [bar0之上的Si [1(1)],方法是从基板上移除自然SiOx层。

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