首页> 外国专利> Reactive magnetron sputtering for coating substrates by target of magnetron, comprises arranging substrate opposite to magnetron, atomizing target material by sputtering and depositing sputtered target material to substrate

Reactive magnetron sputtering for coating substrates by target of magnetron, comprises arranging substrate opposite to magnetron, atomizing target material by sputtering and depositing sputtered target material to substrate

机译:用于通过磁控管的靶涂覆基板的反应磁控溅射,包括:将与磁控管相对的基板布置;通过溅射雾化靶材料;以及将溅射的靶材料沉积到基板上

摘要

Reactive magnetron sputtering for coating substrates by a target of a magnetron, comprises arranging a substrate, which is to be coated, opposite to the magnetron, atomizing the target material by sputtering and depositing the sputtered target material in the presence of a reactive gas to a substrate. The plasma is ignited between the substrate and the magnetron for atomization. The ignition point of the plasma is forced by means of the magnetic system of the magnetron on a self-closed track, preferably an erosion trench. The magnetic system is operated asymmetrically. Reactive magnetron sputtering for coating substrates by a target of a magnetron comprises arranging a substrate, which is to be coated, opposite to the magnetron, atomizing the target material by sputtering and the depositing the sputtered target material in the presence of a reactive gas to a substrate. The plasma is ignited between the substrate and the magnetron for atomization. The ignition point of the plasma is forced by means of the magnetic system of the magnetron on a self-closed track, preferably an erosion trench. The magnetic system is operated asymmetrically. The magnetic flux density in a first magnetic field above a first section of the erosion trench is higher than that in a second magnetic field over a second portion of the erosion trench. An independent claim is also included for a device for reactive magnetron sputtering, comprising the magnetron with the target, which is to be atomized, of the coating material with a cutting surface, the magnetic system on the side of the target facing away from the cutting surface for generating a closed loop magnetic tunnel, which is adjacent to the cutting surface, and a plasma device with the electrode arrangement for generating a plasma ring above the cutting surface, where the magnetic system comprises at least two mutually opposite sections of magnets with different shape and/or material in the magnetic flux density.
机译:用于通过磁控管的靶涂覆衬底的反应性磁控溅射,包括:将要涂覆的衬底布置在与磁控管相对的位置,通过溅射使靶材料雾化,并在存在反应气体的情况下将溅射的靶材料沉积到衬底上。基质。等离子体在基板和磁控管之间被点燃以雾化。等离子体的点火点通过磁控管的磁系统被压在自封闭的轨道上,最好是腐蚀沟槽。磁性系统不对称运行。用于通过磁控管的靶材涂覆衬底的反应性磁控管溅射包括:将要涂覆的衬底与磁控管相对,通过溅射使靶材雾化,并在存在反应性气体的情况下将溅射的靶材沉积到衬底上。基质。等离子体在基板和磁控管之间被点燃以雾化。等离子体的点火点借助于磁控管的磁系统被压在自封闭的轨道上,最好是腐蚀槽。磁性系统不对称运行。在腐蚀沟槽的第一部分上方的第一磁场中的磁通密度高于在腐蚀沟槽的第二部分上方的第二磁场中的磁通密度。还包括用于反应性磁控溅射的装置的独立权利要求,其包括具有切割面的涂层材料中具有待雾化的靶材的磁控管,该材料具有切割表面,靶材一侧的磁性系统背对切割部。用于产生与切割表面相邻的闭环磁隧道的表面,以及具有用于在切割表面上方产生等离子体环的电极装置的等离子体装置,其中,磁性系统包括磁体的至少两个彼此相对的部分形状和/或材料的磁通密度。

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