HIGH QUALITY α-Ga2O3 THIN FILM GROWN BY HYBRIDE VAPOR PHASE EPITAXY GROWTH ON NANOROD PATTERND SAPPHIRE SUBSTRATE AND ITS FABRICATING METHOD

摘要

High quality grown by HVPE growth method on nanorod PSS substrate on which _{α-Ga 2} O _{3thin film can be prepared by growing α-Ga 2} O ₃ using HVPE growth method on PSS substrate in the form of nanorods An α-Ga ₂ O ₃ thin film and a method for manufacturing the same are disclosed. _{A method for manufacturing a high-quality α-Ga 2} O ₃ thin film grown on a nanorod PSS substrate by HVPE growth method according to the present invention comprises the steps of preparing a nanorod PSS substrate by forming a plurality of nanorod patterns on a sapphire substrate; and forming an _{α-Ga 2} O ₃ thin film by growing the nanorod PSS substrate at a source temperature of 450 to 550° C. and a growth temperature of 470 to 550° C. using gallium metal in a state of exposing the nanorod PSS substrate to an N _{2 gas atmosphere.} step; characterized in that it includes.