By growing the β-Ga 2 O 3 thin film by applying a complex pulse mode during epitaxial growth of a thin film form, it is possible to manufacture crystals with high quality epitaxial growth by controlling crystallinity, as well as lowering production cost and producing yield. Disclosed is a method for manufacturing a high-quality β-Ga 2 O 3 thin film grown by using the HVPE growth method capable of improving. A method of manufacturing a high-quality β-Ga 2 O 3 thin film grown using the HVPE growth method according to the present invention includes: (a) etching a surface of a substrate; (b) pre-treating by supplying GaCl on the etched substrate; And (c) forming a β-Ga 2 O 3 thin film by growing the pre-treated substrate under a source temperature of 750 to 900° C. and a growth temperature of 800 to 1,100° C. while exposing the N 2 gas atmosphere. In the step (c), O 2 and GaCl are used as the deposition gas during the growth, but it is characterized in that both the O 2 and GaCl are supplied in a complex pulse mode that periodically supplies and blocks.
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机译：通过在薄膜形式的外延生长期间通过施加复脉冲模式来生长β-Ga 2 O 3 薄膜，可以制造高质量的外延晶体通过控制结晶度以及降低生产成本和产量来实现生长。公开了一种通过使用能够改善的HVPE生长方法制造的高质量β-Ga 2 O 3 薄膜的制造方法。制造使用根据本发明的HVPE生长方法生长的高质量β-Ga 2 O 3 薄膜的方法包括：（a）蚀刻基材; （b）通过在蚀刻的衬底上提供GaCl进行预处理;并且（c）通过在750至900℃的源温度和生长温度下生长预处理的衬底来形成β-Ga 2 O 3 薄膜。暴露在N 2 气氛中，温度为800至1100°C。在步骤（c）中，在生长期间将O 2 和GaCl用作沉积气体，但是其特征在于，O 2 和GaCl都被供给。定期提供和阻塞的复杂脉冲模式。
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