Disclosed is a method of manufacturing an α-Ga_2O_3 thin film grown by a pulse mode by using a halide vapor phase epitaxy (HVPE) growth scheme, in which the α-Ga_2O_3 thin film is grown in the pulse mode during epitaxial growth in a form of the thin film, so that crystallizability is controlled to manufacture with high-quality epitaxial growth, and a production yield is increased while a production cost is reduced. According to the present invention, the method of manufacturing the α-Ga_2O_3 thin film grown by the pulse mode by using the HVPE growth scheme includes: (a) etching a surface of a substrate; (b) preprocessing the etched substrate by flowing GaCl on the etched substrate; and (c) forming the α-Ga_2O_3 thin film by performing growing under a source temperature of 350 to 550 °C and a growth temperature of 400 to 650 °C while exposing the preprocessed substrate in an N_2 gas atmosphere, wherein, in the step (c), during epitaxy, a deposition gas is supplied in the pulse mode in which supplying and blocking are periodically repeated.
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