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首页> 外文期刊>Asian Journal of Chemistry: An International Quarterly Research Journal of Chemistry >Study on Corrosion Behaviour of n-Type Porous Silicon Layer in Tetramethylammonium Hydroxide Solution
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Study on Corrosion Behaviour of n-Type Porous Silicon Layer in Tetramethylammonium Hydroxide Solution

机译:四甲基氢氧化铵溶液中n型多孔硅层的腐蚀行为研究

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摘要

The corrosion behaviour of n-type porous silicon layer in tetramethylammonium hydroxide solution with or without ethanol was studied by weight loss measurements. The results show that the corrosion rate goes up with increasing temperature and decreases with increasing the volume ratio of ethanol in 0.5 M tetramethylammonium hydroxide. The activation parameters of E_a, A, △Ha and △Sa for n-type porous silicon layer corrosion in 0.5 M tetramethylammonium hydroxide were calculated and discussed.
机译:通过失重测量研究了n型多孔硅层在有或没有乙醇的氢氧化四甲铵溶液中的腐蚀行为。结果表明,腐蚀速率随温度的升高而升高,随乙醇在0.5M氢氧化四甲铵中的体积比的增加而降低。计算并讨论了E_a,A,△Ha和△Sa对n型多孔硅层在0.5 M氢氧化四甲铵中腐蚀的活化参数。

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