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Corrosion of Fresh Porous Silicon in Potassium Hydroxide Solution

机译:氢氧化钾溶液中新鲜多孔硅的腐蚀

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Porous silicon samples were fabricated by electrochemical anodization of silicon wafers. Afterfabricating, the corrosion of fresh porous silicon (f-PS) in potassium hydroxide solution in the absenceand presence of ethanol was systemically studied by electrochemical methods, weight lossmeasurements and scanning electron microscope. The effect factors for f-PS corrosion in KOHsolution were investigated. It found that the temperature and composition of corrosion solution canaffect the detection accuracy of weight loss measurements to measure the porosity of f-PS. In addition,the activation parameters (Ea, A, 矵a and a) for f-PS in 1.0 M KOH were obtained.
机译:多孔硅样品是通过硅片的电化学阳极氧化制成的。制备后,通过电化学方法,失重测量和扫描电子显微镜系统研究了在无乙醇存在下氢氧化钾溶液中新鲜多孔硅(f-PS)的腐蚀。研究了KOH溶液中f-PS腐蚀的影响因素。发现腐蚀液的温度和成分会影响重量损失测量以测量f-PS孔隙率的检测精度。此外,获得了在1.0 M KOH中f-PS的活化参数(Ea,A,矵a和a)。

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