High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs

摘要

We demonstrate that the electron and hole mobilities are improved on both Si(100) and (110) surfaces using accumulation mode (AM) MOSFETs because of the bulk current and lower effective field in the same overdrive bias. Flicker noise characteristics are improved dramatically at AM MOSFETs compared with that at conventional inversion mode (IM) devices. Finally, we demonstrate the negative bias temperature instability (NBTI) characteristics in AM devices are improved about one decade compared with that in IM devices.