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Epitaxial Growth of Ni-Fe/Mn-Ni Bilayers on MgO Single-Crystal Substrates by the Facing-Targets Sputtering Method

机译:面向靶溅射法在MgO单晶衬底上外延生长Ni-Fe / Mn-Ni双层

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摘要

Ni-Fe/Mn-Ni bilayers were fabricated at roomtemperature on MgO{100} and MgO{110} single-crystalsubstrates by the facing-targets dc sputtering method. The Ni-Felayer was deposited by applying a bias voltage. After thedeposition of the Ni-Fe layer, an Mn-Ni layer was deposited onthe Ni-Fe layer. The Ni-Fe and #gamma#-Mn-Ni layers weregrown by epitaxy and highly oriented in their crystal axes in thefilm plane. In the case of the MgO{100} substrate, the preferredorientations of Ni-Fe and #gamma#-Mn-Ni were (001), and thedirections of Ni-Fe(100) and #gamma#-Mn-Ni(100) wereparallel to MgO(100). The crystal structure of #gamma#-Mn-Niwas fct, and c/a decreased from 1.01 to 0.984 when the Mn-Nilayer thickness increased from 200 to 1000 ?. In the case of theMgO{110} substrate, the preferred orientations of Ni-Fe and#gamma#-Mn-Ni were (110), and the directions of Ni-Fe (001)and #gamma#-Mn-Ni(001) were parallel to the direction ofMgO(001). The crystal structure of #gamma#-Mn-Ni was fct (c/a = 0.978).
机译:通过面对靶dc溅射法在室温下在MgO {100}和MgO {110}单晶衬底上制备Ni-Fe / Mn-Ni双层。通过施加偏置电压来沉积Ni-Felayer。在沉积Ni-Fe层之后,在Ni-Fe层上沉积Mn-Ni层。 Ni-Fe和#γ#-Mn-Ni层通过外延生长,并在膜平面的晶轴上高度取向。在MgO {100}衬底的情况下,Ni-Fe和#gamma#-Mn-Ni的优选取向为(001),Ni-Fe(100)和#gamma#-Mn-Ni(100)的取向与MgO(100)平行Mn-Ni层的厚度从200μm增加到1000μm时,#γ#-Mn-Ni的晶体结构为fct,c / a从1.01降低至0.984。在MgO {110}衬底的情况下,Ni-Fe和#gamma#-Mn-Ni的优选取向为(110),Ni-Fe(001)和#gamma#-Mn-Ni(001 )平行于MgO(001)的方向。 #γ#-Mn-Ni的晶体结构为fct(c / a = 0.978)。

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