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首页> 外文期刊>電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices >Closed expressions for power dissipations of CMOS logic gates and their application to CMOS circuitries
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Closed expressions for power dissipations of CMOS logic gates and their application to CMOS circuitries

机译:CMOS逻辑门功耗的封闭式及其在CMOS电路中的应用

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We have developed simple and closed expressions for both a short-circuit power dissipation (p{sub}s) and a charge-discharge power dissipation (p{sub}D) of a single CMOS logic gate. p{sub}s is expressed by the number (m) of logic gates parallel to a given logic gate and the number (n) of fan-outs of the same gate. p{sub}s and p{sub}D expressions for various logic gates including NOT, NAND, NOR, AND-NOR and OR-NAND have been obtained so that the power dissipation of even large circuitries can be easily estimated without using CAD tools, since both m and n are known factors. We applied these expressions to an 8-bit ripple carry adder and an 8-bit square-root, divider circuit. The calculated power dissipations with these expressions were almost the same as these with SPICE.
机译:对于单个CMOS逻辑门的短路功耗(p {sub} s)和充放电功耗(p {sub} D),我们已经开发了简单的闭合表达式。 p {sub} s由与给定逻辑门平行的逻辑门数量(m)和同一门的扇出数量(n)表示。已经获得了包括NOT,NAND,NOR,AND-NOR和OR-NAND在内的各种逻辑门的p {sub} s和p {sub} D表达式,因此即使不使用CAD工具也可以轻松估计甚至大型电路的功耗,因为m和n都是已知因子。我们将这些表达式应用于8位纹波进位加法器和8位平方根除法器电路。使用这些表达式计算出的功耗与使用SPICE计算得出的功耗几乎相同。

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