Effects of surface cleaning processes on device performances of GaAs FETs

摘要

Surface oxides of compound semiconductors have been known to cause changes in FET performances such as gate-lag, gate-drain breakdown and FET noise, etc. Firstly, effects of oxygen ash to recess surfaces on device performances of GaAs FETs were presented in order to introduce oxygen-ash-free surface cleaning processes to the device manufacture. Secondly, effects of surface cleaning processes on device performances of oxygen-ash-free manufacturing GaAs FETs were investigated. By applying the chemical components including nitrogen-containing compounds to the surface cleaning processes in InGaAs/AlGaAs p-HEMTs, high performances of noise reduction ranging from about 0.30 dB to 0.37dB in NF as well as improvements on Schottky junction property were obtained.